2D Transistors Take On Silicon
Atomically thin MoS₂ transistors with sub-5nm channels have demonstrated switching beyond silicon’s theoretical limits, pointing toward smaller and more energy-efficient chips for...
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Atomically thin MoS₂ transistors with sub-5nm channels have demonstrated switching beyond silicon’s theoretical limits, pointing toward smaller and more energy-efficient chips for...
Can transistors switch below the conventional power limit without sacrificing useful current? A 2D device uses quantum tunnelling to push beyond it. A research team led by The Hong...
Selective chemical conversion transforms a single layered crystal into semiconductor, insulating, and electrical contact regions, producing transistors with near-theoretical switch...
Insider Brief PRESS RELEASE — Today, IBM (NYSE: IBM), in collaboration with Siemens, announced new research aimed at advancing IBM’s nanostack architecture, a new transistor archit...
A new two-dimensional semiconductor material could address a major limitation in next-generation chip design, enabling smaller transistors, improved switching performance, and pote...
Китайские исследователи наметили путь к выпуску транзисторов класса 3 нм с использованием глубокой ультрафиолетовой литографии (DUV) вместо более современной EUV. Разработка пока н...
A tin diselenide tunneling injector supplies charge efficiently to both n- and p-type 2D semiconductor channels, simplifying the design of ultrathin CMOS devices.
A wafer-scale 2D semiconductor combines high hole mobility, strong stability and transistor performance, advancing next-generation CMOS electronics.
The relentless demand for data storage and processing has pushed memory technology into an era where density, speed and energy efficiency must improve simultaneously. One of the mo...
Researchers demonstrate wafer-scale indium selenide transistors that suppress unwanted memory effects, opening a path toward more reliable, energy-efficient electronic circuits.
MemSilicon says MountTai 2026 is the first high-density 1T4R RRAM chip at gigabit scale: 1Gb on 28nm CMOS, 30Mb/mm2 density, under 20ns access and on-chip ECC. Validation is underw...
Researchers engineer an ultrathin interface that preserves electron mobility while enabling thinner gate dielectrics in high-performance 2D transistors.
Insider Brief PRESS RELEASE — The next generation of microelectronics relies on radical improvements in transistor switching performance to advance computing power. However, conven...
As chipmakers stack dies vertically to meet surging AI demand, 2D imaging is losing its edge. Automated 3D reconstruction is becoming essential to keeping fabs on pace.
Источник: Компьютерра - Журнал о науке и технологиях Исследователи Китайской академии наук представили новую архитектуру транзистора с круговым затвором — GAA. Устройство изготови...
CAS Institute of Semiconductors reports a sliding ferroelectric tunnel junction with TER of 1.9×10^7, ns switching, fJ/bit energy, and 10^11-cycle endurance in a Science-linked stu...
Источник: Компьютерра - Журнал о науке и технологиях Компания Lam Research представила архитектуру транзисторов SA-CFET, которая может позволить продолжить развитие CMOS-технологи...
In 1884, an English schoolmaster wrote a short novel about a world with only length and breadth, whose inhabitants could not conceive of a third direction until one of them was lif...
Electric-field assembly places single 2D semiconductor flakes across thousands of transistor channels, removing resistive junctions and enabling high-performance solution-processed...
Уменьшение размеров транзисторов и цепей в целом всегда было простым путём к повышению производительности чипов. Всё это работало ровно до того момента, как размеры элементов вплот...
Researchers at the National University of Singapore (NUS), led by Assistant Professor Ahmet Avsar of the university's Centre for Advanced 2D Materials, have combined a record-fidel...
A technique to control where atomically thin semiconductor crystals begin growing, potentially enabling high-quality stacked chips that reduce data-transfer delays and energy consu...
A research team at The Hong Kong Polytechnic University has engineered a novel tunnelling field-effect transistor utilising 2D nanomaterials.
Power electronics is having a moment. From electric vehicles to data centers, grid infrastructure to fast chargers, the world’s appetite for converting and controlling electrical e...
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